http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H07273037-A

Outgoing Links

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d6402b23ab8782152be47b3996e48a4a
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
filingDate 1994-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_31c608e499a89f52e33851bf2126a340
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a4618062037a93addb147dad6c2dc4ac
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b3397add133583a85ba6fb6d88311f82
publicationDate 1995-10-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H07273037-A
titleOfInvention Semiconductor substrate processing equipment
abstract (57) [Summary] [Object] To provide a semiconductor substrate processing apparatus using a CVD method. [Structure] Substrate heating table 2 that holds and heats wafer 20 And a multi-electrode 5 in which a plurality of excitation-side electrode plates that are excited by a high frequency that excites the gas to be activated in a plasma state and ground-side electrode plates that are grounded are alternately arranged, and an activated plasma state Plasma-like gas disperser 11 for uniformly supplying gas to the surface of wafer 20, ring-shaped nozzles 8a and 8b for supplying reaction gas for forming a film on the surface of wafer 20, and the reaction gas and plasma-like gas are uniformly mixed. Then wafer 20 By forming the reaction chamber 4a supplied to the surface and the exhaust port 12 provided around the wafer 20 whose exhaust amount can be adjusted, metal nitride, silicide, or metal oxide film can be formed on a large-diameter wafer. It becomes possible to carry out uniformly at low temperature.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2020074409-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H09283450-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2021101479-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11469081-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6382129-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11469083-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11749510-B2
priorityDate 1994-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

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Total number of triples: 29.