| abstract |
(57) [Abstract] [PROBLEMS] To provide a method for manufacturing a semiconductor device capable of reducing impurities at a regrowth interface, and a method for cleaning a semiconductor crystal surface capable of removing impurities at a semiconductor crystal surface more simply and surely. An object of the present invention is to provide a device manufacturing method and a semiconductor device formed by using the cleaning method. [Structure] A GaAs cap 3 layer formed in advance on the AlGaAs layer 2 is placed in a chamber and then Hold at a temperature of 50 ° C or less, HCl gas, hydrogen gas, A After supplying a mixed gas consisting of sH3 gas to remove the oxide film on the surface, in a state where it does not come into contact with the outside air, The GaAs cap layer 3 and the AlGaAs layer 2 are formed of AlG. Dry etching is performed so that the aAs layer 2 is exposed, and AlGaA The GaAs layer 4 was recrystallized on the s layer 2. |