| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_60e21de07fa18fc54e2150daffc14654 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate |
1994-02-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_25d15ab91634ae55a6b2ab2b6e945974
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21d9799f87afc7be7126d137ebe58a16 |
| publicationDate |
1995-08-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-H07226380-A |
| titleOfInvention |
Atomic layer crystal growth method |
| abstract |
(57) [Summary] (Modified) [Objective] Atomic layer growth of various materials is performed in a wide substrate temperature range (200 to 500 ° C.) and a high-purity compound semiconductor crystal is obtained. In a growth method in which an atomic layer of a compound semiconductor crystal is grown on a substrate by alternately supplying a semiconductor thin film raw material onto the growth substrate, after adsorbing one or more atomic layers onto the substrate surface, , Supply etching gas, An atomic layer crystal growth method for growing a crystal for each atomic layer by selectively removing excessively adsorbed atoms of two atomic layers or more while leaving the atomic layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100496906-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100496903-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100486637-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9340873-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9416446-B2 |
| priorityDate |
1994-02-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |