http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H07153595-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F4-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05H1-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
filingDate 1993-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a65d59aa48cdeac764baa5c454b69768
publicationDate 1995-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H07153595-A
titleOfInvention Magnetic field inductively coupled plasma processing system
abstract (57) [Abstract] [Purpose] To provide a plasma processing apparatus with improved throughput of film formation and etching of a large area substrate. A vacuum container is provided with a plurality of high-frequency introducing means having a through transfer mechanism, having a central axis perpendicular to the carrying direction and parallel to the substrate processing surface, and means for generating a magnetic field parallel to the central axis of the high-frequency introducing means. Attached plasma processing device.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109989048-A
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0871795-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007208134-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0871795-A4
priorityDate 1993-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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