http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H07142483-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312 |
| filingDate | 1993-11-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4e952947ad0dec4e798466400e25f0fe |
| publicationDate | 1995-06-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H07142483-A |
| titleOfInvention | Wafer surface flattening method |
| abstract | (57) [Summary] [Object] An object of the present invention is to provide a method for flattening a wafer surface with which sufficient flatness can be obtained, and to improve the yield and reliability of semiconductor devices. A flattening insulating film 14 made of an organic material is formed on the insulating film 13 made of a silicon oxide material formed so as to cover the steps on the surface of the wafer 1 so as to fill the steps. Next, plasma is generated at a density of 10 10 to 10 13 cm −3 or less in the etching chamber kept at 10 to 50 pa or less, and the planarization insulating film 14 is etched back until the insulating film 13 appears. Furthermore, a bias voltage of −500 to −200 v or less is generated in the sheath region on the wafer 1, The insulating film 13 and the planarizing insulating film 14 are etched back by setting the etching selection ratio of the planarizing insulating film 14 to the insulating film 13 to 0.3 to 0.9 or less. This prevents the occurrence of cracks due to the oxidation of the flattening insulating film and maintains the flatness of the surface to promote the etch back. |
| priorityDate | 1993-11-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 19.