| abstract |
(57) [Abstract] [PROBLEMS] To provide a semiconductor device having a silicon oxide film, which is useful as an interlayer insulating film or a protective film, and which is capable of globally flattening a step difference in a substrate without causing cracks in a method for manufacturing a semiconductor device. The purpose is to [Structure] In manufacturing a semiconductor device, the following steps are performed: a step of applying a solvent solution of a specific polycarbosilane onto a substrate having a conductive component formed therein, and a polycarbosilane film after application. 35 in an oxidizing atmosphere And a step of converting the polycarbosilane film into a silicon oxide film by heating at a temperature of 0 ° C. or higher. |