http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H07106304-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0a6a69da5879eb83f56f6876dba3e3cf |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate | 1993-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_88d1cc4e93cb460978aa6c1258be9b22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6be0ee15daedc0fa7db46305dbdfab5c |
| publicationDate | 1995-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H07106304-A |
| titleOfInvention | Semiconductor device manufacturing method and semiconductor manufacturing device |
| abstract | (57) [Abstract] [Purpose] To provide a high-selection-ratio type polysilicon dry etching method for a silicon nitride film. [Structure] A silicon nitride film 2 having a thickness of 40 nm and a polysilicon film 3 having a thickness of 600 nm are sequentially grown on a semiconductor substrate 1 by a low pressure chemical vapor deposition method. Then, a 1.2 μm-thick photoresist film 4 is formed on the polysilicon film 3, and a predetermined pattern is formed by a known method. Further, nitrosyl bromide (NOBr) is used as an etching gas, and the polysilicon film 3 is dry-etched using the photoresist film 4 as a mask to form the polysilicon film 3 having a predetermined pattern. The dry etching condition at this time is NOBr. Flow rate of 60 sccm, vacuum degree of 150 × 10 −3 Tor r and applied high frequency power was 300W. |
| priorityDate | 1993-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 40.