| abstract |
(57) [Abstract] [Purpose] A resist having an inverse tapered cross-sectional shape. When performing hole processing using a pattern, it is possible to prevent the occurrence of dimensional conversion difference and the deterioration of anisotropy. [Structure] The resist pattern 4 formed of a chemically amplified negative resist material is likely to have an inverse taper shape due to its photosensitivity. Therefore, the SiO x : H layer 3 is formed in advance as a hydrogen enriched layer on the SiO 2 interlayer insulating film 2, Hydrogen released during the etching of this layer 3 is used to accelerate the deposition of the carbon-based polymer. For example, c-C 4 F 8 When the / CH 2 F 2 mixed gas is used for etching, the polymer layer 6 is efficiently deposited on the side wall surface 4a of the resist pattern 4, and the side wall of the pattern can be corrected almost vertically. Thereby, the scattering of incident ions at the edge portion of the pattern can be prevented, and the connection hole 7 having the anisotropic shape and the dimension as designed can be formed. |