| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c3070783318d4f17db6ad97e418a5503 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-50 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-505
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-202
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03G5-08278
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02529
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02576 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-505
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03G5-082
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03G5-08 |
| filingDate |
1993-04-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1bab25e72cd6335ae2cf005b0fe4b8e2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2834163e3cf5f5e838650ddafb7aad28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_074328acd9f6d309ec3d8bcf0438ff3c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_62397c548715c7fc0aaf76ee779b5b42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_39fe69ac0df22bda889abbcc5edc3f2d |
| publicationDate |
1994-02-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-H0649644-A |
| titleOfInvention |
Method for doping amorphous silicon and method for producing electrophotographic recording material |
| abstract |
(57) [Summary] [Purpose] A donor for deposition from a gas discharge, which can be carried out without the expense of special safety techniques and which allows for targeted adjustment of a given doping concentration. Method for the doping of amorphous silicon with. In a method of doping amorphous silicon with a donor during deposition from a gas discharge, trimethylphosphine is added to the doping gas. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011089193-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2011036957-A1 |
| priorityDate |
1992-04-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |