| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0605
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66462
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F4-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32972
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8252
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30621 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F4-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-335
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05H1-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8252 |
| filingDate |
1993-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4c2a44d361eb928e9052c759eb50fe60
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fbdb83d53f35ca2a52cbcd154d9bbb7b |
| publicationDate |
1994-11-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-H06314668-A |
| titleOfInvention |
Plasma etching method and plasma etching apparatus |
| abstract |
(57) [Abstract] [PROBLEMS] To provide a plasma etching method and a plasma etching apparatus capable of uniformly etching a target layer of a laminated film in a short time by a simple process. And In a plasma etching method for etching a laminated film composed of layers of at least two kinds of substances, the above-mentioned at least two kinds of substances are kept at a constant velocity until the layer immediately above the layer to be stopped is reached. An etching gas for etching is used, and an additive gas for reducing the etching rate of the layer for which etching is to be stopped is added to the etching gas from a layer immediately above the layer for which etching is to be stopped. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10079184-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017028242-A |
| priorityDate |
1993-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |