http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H06302554-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1af8df51ce24ca931ae718fb747f6aa0 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 |
| filingDate | 1993-04-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_18a909f8e38f07d46c6ba42605a87cb9 |
| publicationDate | 1994-10-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H06302554-A |
| titleOfInvention | Method for etching semiconductor material |
| abstract | (57) [Summary] [Objective] To provide an etching method capable of producing a good quality crystal with little damage. The etching apparatus supports a first vacuum chamber 1, a second vacuum chamber 2, a first electromagnetic coil 3, a second electromagnetic coil 4, an etching gas supply port 5, a waveguide 6, and a semiconductor material. The substrate holder 7, the substrate 8, and the high-frequency power source 9 are used as main components. A magnetic field is applied to both vacuum chambers, and the ions are trapped in the magnetic field and proceed to the vicinity of the substrate 8 without diverging. Since a high frequency bias is applied to the substrate holder 7 and the ions are drawn into the substrate 8 by the enhanced driving force, the directionality of the ions is constant and the physical sputtering force is sufficiently obtained even at low high frequency power, but the ion impact is small. . Therefore, the degree of crystal damage due to etching is reduced. |
| priorityDate | 1993-04-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 16.