| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_daa48ed820a7dad29affa51e58caf757 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2111-00844
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-50 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1884
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B41-009
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B41-5346
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B41-91 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1343
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01G19-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B41-91
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F4-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B41-53 |
| filingDate |
1994-01-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_441fcfcc8985d33ba7e6b5be31b65083 |
| publicationDate |
1994-10-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-H06283481-A |
| titleOfInvention |
Method for reactive ion etching of indium tin oxide |
| abstract |
(57) Summary [Objective] To provide a new and improved etching method for thin ITO layers deposited on a substrate, which does not have the drawbacks of the conventional methods. The thin indium tin oxide layer 3 deposited on the substrate 1 is subjected to reactive ion etching treatment in plasma containing dissociated hydrogen bromide or a mixture of dissociated hydrogen bromide and dissociated boron trichloride. |
| priorityDate |
1993-01-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |