| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_80787665b837ed3eb503bbcd27c0043a |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate |
1993-03-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6b1614c9008e94b3576f747ca408ee00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_59ab4ac2ccab5c0fd3178761e8a01334
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c5e05ee7a9c2239e99a977e7e16fc9ed
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9cb95cd12efdbe867e666db76cad70f9 |
| publicationDate |
1994-09-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-H06252106-A |
| titleOfInvention |
Dry etching method for amorphous silicon film and thin film transistor manufactured by using the dry etching method |
| abstract |
(57) [Summary] [Object] To provide an effective etching method using a gas not specified as a depleting substance of the ozone layer in a-Si etching processing of TFT, and a thin film transistor manufactured by the method. thing. [Structure] The purpose is to dry-etch the amorphous silicon film in a mixed gas system of SF 6 and BCl 3 or in a mixed gas system in which a gas such as Ar or He is added. And a method of dry etching amorphous silicon, and a thin film transistor characterized by being manufactured using this method. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008507416-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4749422-B2 |
| priorityDate |
1993-03-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |