| abstract |
(57) [Summary] [Object] To provide a pattern forming method capable of obtaining a desired pattern by thickening the pattern 15a once formed with high versatility. [Structure] A layer 15 of an i-line positive resist containing an acid generator 13 is formed on a silicon substrate 11. This layer 15 The line and space pattern 15a is obtained. The sample is irradiated with ultraviolet rays and heated to generate the acid 13a in the pattern 15a. On this sample, a layer 17 of a chemically amplified resist that is crosslinked by the action of an acid is formed. This sample is 1 Heat treatment is performed at a temperature of 00 ° C. for 1 minute to diffuse the acid 13a in the pattern 15a into the resist layer 17 over a distance according to the heat treatment conditions. Since the portion of the resist layer 17 covered with the acid 13a is crosslinked, this portion is converted into a modified layer which is insoluble in the developing solution. The resist layer 17 is removed with a developing solution. A desired pattern consisting of the pattern 15a and the modified layer is obtained. |