| abstract |
(57) [Abstract] [Objective] In an electrode forming method of a semiconductor element used for an electronic device, particularly a hybrid IC, the number of steps is reduced and the manufacturing facility is simplified, and further, the semiconductor element is formed in the electrode forming process. SUMMARY OF THE INVENTION It is an object of the present invention to solve problems such as damage to the substrate, and to stably form a base metal layer and a protruding electrode only on an Al electrode of a semiconductor element with a high yield by a simple operation. [Structure] After activating the Al surface of a semiconductor element 11 having an Al electrode 12 with a solution in which a reducing agent is dissolved, the semiconductor element 11 is immersed in an activation strike solution containing a metal salt and a complexing agent, and subsequently, an electroless Ni plating solution. Then, the Ni electrode film 15 is formed, and then the Ni protruding electrode 22 is formed by the redox reaction type electroless Ni plating solution. Further, after forming an Au layer 23 having a thickness of about 0.05 μm by displacement Au plating, a thick Au plating film 29 is formed by using a non-cyan type redox reaction type Au plating solution using ascorbic acid as a reducing agent. Thus, the protruding electrode 30 capable of face-down mounting can be obtained. |