http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0622219-B2
Outgoing Links
Predicate | Object |
---|---|
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-094 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-09 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 |
filingDate | 1983-10-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 1994-03-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-H0622219-B2 |
titleOfInvention | Method for manufacturing semiconductor device using polyorganosilicon layer |
priorityDate | 1982-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 38.