http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H06188225-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate | 1992-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_abb18267de8d0ec051743e91ff5649ad |
| publicationDate | 1994-07-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H06188225-A |
| titleOfInvention | Dry etching method |
| abstract | (57) [Summary]n[Purpose] Blanket CV on TiON barrier metal B blanket W (Blk-W) laminated by the D method The layer is controlled with good control while suppressing the loading effect. Chip back to form a highly reliable plug.n[Structure] TiON barrier metal is originally Cl * Against It has high etching resistance and therefore prevents loading effects. Although it contributes to the stop, the inorganic carbon CO using nyl compounds * To pull out O atom Therefore, the above resistance is slightly reduced, and stable etch back characteristics are achieved. Get sex. For example, in the first step, S 2 F 2 / H 2 mixture The Blk-W layer 5 was etched back at high speed using gas. Then, in the second step, Cl 2 / CO 2 Ti using mixed gas Etching back the / TiON laminated barrier metal 4 The W plug 5sp can be left flat in the connection hole 3. It |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2006126520-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7919005-B2 |
| priorityDate | 1992-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 40.