| abstract |
(57) [Summary] [Objective] Regarding a method for manufacturing a semiconductor device, an interlayer film having a high barrier property, a good coverage, and a low hygroscopic property is realized by using a fluid deposition method containing no organic group. , Provided is a method for manufacturing a semiconductor device, which can cover even a fine stepped portion due to miniaturization of an element shape with a flat and reliable insulating film. [Structure] Using silane-based gas and H 2 O as source gases, A film containing inorganic silanol is formed by the plasma CVD method. At that time, in the plasma CVD method, the product of the plasma excitation energy and the substrate heating temperature is 20 (° C.). ・ W / cm 2 ) or less. |