| abstract |
(57) [Abstract] [Purpose] To form a very deep groove with a regular shape on a silicon substrate efficiently and with high precision. [Configuration] RIE (reactive ion Etching equipment is used as the etching gas for HBr as a Br-based gas, SF 6 and SiF 4 as an F-based gas, and He. O 2 gas containing gas was used. As a result, the selectivity to SiO 2 is dramatically increased, and while maintaining the slight taper of the sidewall angle of almost 90 degrees, deeper deep grooves that could not be realized until now can be formed with good reproducibility and good shape. It was As an example, a very good deep groove having a depth of 20 μm could be formed on the SOI substrate. |