http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H06163473-A

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F4-00
filingDate 1992-11-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b8b7ab94d6c8953a66a9133f203ebac0
publicationDate 1994-06-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H06163473-A
titleOfInvention Dry etching method
abstract (57) [Abstract] [Purpose] Highly selective and anisotropic etching of W-polycide film is performed without using CFC (chlorofluorocarbon) gas. [Structure] The W-polycide film 5 is formed of CO / SF 6 / HBr. Etching is performed using a mixed gas. WSi x by F * While the rapid etching of the layer 4 and the high selective etching of the polycrystalline silicon layer 3 by Br * proceed, the CBr x polymer derived from the decomposition product of the resist mask 6 becomes CO. Incorporating C—O bonds, carbonyl groups and the like derived from the above, the side wall protective film 7 having a strong film quality is formed. Therefore, the incident ion energy and the deposition amount of the carbon-based polymer necessary for anisotropic processing can be reduced, the selectivity with respect to the resist mask 6 and the gate oxide film 2 can be improved, and particle contamination can be suppressed. If S 2 Br 2 is added to the gas and the deposition of S (sulfur) is also used, the selectivity is further improved and the pollution is reduced.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H09306895-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9287495-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100390815-B1
priorityDate 1992-11-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419546345
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419578708
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419546958
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419594215
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419526856
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID139605
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID402
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419514967
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID61526
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID140772
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID25353
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419556587
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419513686
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419513373
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559526
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419593357
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID24682
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID255291
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID521350
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID457814461
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID114845
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419520437
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID415844527
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID66242
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID426105758
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID457698762
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID24408
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID136332
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID945
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559537
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419583492
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID280
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID16212546
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID11643

Total number of triples: 49.