http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0575133-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f187eb8cb31e70d4acd428dd8beedd4f |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28211 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28202 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-513 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-518 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-792 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-792 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-788 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-51 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247 |
| filingDate | 1991-09-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cecbdf18fe7aa92889d0c74e89a0ae67 |
| publicationDate | 1993-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H0575133-A |
| titleOfInvention | Non-volatile storage device |
| abstract | (57) [Abstract] [Purpose] In a nonvolatile memory device, a low write voltage and a sufficient total amount of trapped charges are secured, and at the same time, injection of charges from a gate electrode is prevented. [Structure] A silicon oxide film 1 is sequentially formed on a silicon substrate 10. 2, silicon oxide / nitride mixed film 18, silicon oxide film 1 5, the polysilicon electrode 16 is formed. The silicon oxide / nitride mixed film 18 is formed by forming a silicon oxide film having excess silicon by sputtering, etching back to expose a silicon deposition region, and performing a nitriding treatment in a nitrogen atmosphere. The silicon oxide / nitride mixed film 18 has a large number of interfaces between silicon oxide regions and silicon nitride regions, and a large number of charges from the silicon substrate 10 are accumulated at these interfaces to write data. The silicon oxide film 15 is a polysilicon electrode 16 Of electric charge is suppressed, and deterioration of the silicon oxide film 12 is prevented. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6867455-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7442989-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007158176-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5972800-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6037651-A |
| priorityDate | 1991-09-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 32.