http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0541365-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d7576285d411d00c697e07270d2814a |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 |
| filingDate | 1991-08-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d7aa2e13f2dba9e0207fed0775709033 |
| publicationDate | 1993-02-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H0541365-A |
| titleOfInvention | Method for manufacturing semiconductor device |
| abstract | (57) [Abstract] [Purpose] An object of the present invention is to perform etching with high selectivity in an interlayer insulating film such as SiO 2 or SiN 4 of a semiconductor device without removing the underlying Si. [Structure] Etching is performed by adding an organic gas having a reducing aldehyde group, such as formaldehyde or acetaldehyde, to an etching gas containing F such as CHF 3 , NF 3 , CF 4 , and SF 6 . [Effect] SiO 2 can be etched with high selectivity. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0905757-A2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0905757-A3 |
| priorityDate | 1991-08-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.