| abstract |
(57) [Summary] [Object] To provide a dry etching apparatus capable of forming a groove in a silicon substrate with extremely high accuracy. [Structure] The temperature of a sample on which a sample to be etched is placed is controlled to a predetermined temperature of -10 ° C or lower and -160 ° C or higher by a combination of cooling and heating, and etching is performed. [Effect] By using both cooling and heating, the temperature of the sample table can be controlled extremely accurately, and highly accurate etching can be realized. |