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filingDate 1992-04-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 1993-11-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H05304089-A
titleOfInvention Method and apparatus for removing resist from substrate surface
abstract (57) [Abstract] [Purpose] When the resist film is removed from the surface of the substrate after reactive ion etching, the resist and silicon oxide are completely removed from the substrate in one process step. It can be so. [Structure] Steam of anhydrous sulfuric acid 16 and steam of hydrofluoric acid 20 are supplied to the surface of a substrate 10 on which a resist film is formed.
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