http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H05291199-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 |
| filingDate | 1992-04-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b8b7ab94d6c8953a66a9133f203ebac0 |
| publicationDate | 1993-11-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H05291199-A |
| titleOfInvention | Dry etching method |
| abstract | (57) [Summary] [Purpose] Highly selective and anisotropic etching of W-polycide film is performed without using CFC (chlorofluorocarbon) gas. [Structure] The W-polycide film 5 is etched using SOF 2 (thionyl fluoride) / HBr mixed gas. At this time, the carbon-based polymer CBr x formed due to the decomposition product of the resist mask 6 has a thionyl group (> S = O) gives a strong chemical bond and an electrostatic adsorption force, so that a strong side wall protective film 7 can be formed. Therefore, the incident ion energy and the deposition amount of the carbon-based polymer necessary for anisotropic processing can be reduced, the selectivity with respect to the resist mask 6 and the gate oxide film 2 can be improved, and particle contamination can be suppressed. Add S 2 Br 2 to the gas to add S If the deposition of (sulfur) is also used, further high selectivity can be achieved, and if SF 6 or the like is also used when the WSi x layer 4 is etched, higher speed can be realized. |
| priorityDate | 1992-04-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 44.