http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H05283376-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 |
| filingDate | 1992-04-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1993-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H05283376-A |
| titleOfInvention | Dry etching method |
| abstract | (57) [Abstract] [Purpose] To improve the underlayer selectivity during etching of the lower resist layer in the three-layer resist process. [Structure] The lower resist layer 3 on the Al-1% Si-0.5% Cu layer 2 is etched using SOCl 2 / O 2 mixed gas. The side wall protective film 6 formed at this time is C It is a carbon-based polymer in which a thionyl group (> S = O) is introduced into Cl x and has high etching resistance due to a strong chemical bond and electrostatic adsorption force. Therefore, the incident ion energy required for anisotropic processing can be reduced and the underlayer selectivity is improved, so that the spatter reattachment of the Al-1% Si-0.5% Cu layer 2 does not occur. If S 2 Cl 2 is added to the above-mentioned gas system and S is also used in combination, higher selectivity, lower damage and lower pollution can be realized. If SO 2 Cl 2 (sulfuryl chloride) or the like is used instead of SOCl 2 , The same effect can be obtained. |
| priorityDate | 1992-04-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 38.