http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H05275399-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 |
| filingDate | 1992-03-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1993-10-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H05275399-A |
| titleOfInvention | Dry etching method and apparatus thereof |
| abstract | (57) [Summary] [Purpose] Dry etching is performed to form a trench hole having an outwardly sloping side wall and a gentle taper shape and an obtuse angled corner portion at the opening. A quartz window 22 is provided on a side wall of an etching chamber 8 of an electron cyclotron resonance discharge dry etching apparatus, an ultraviolet source 21 is installed outside the quartz window 22, and parallel plate electrodes are provided on both sides of an etching wafer installed inside the etching chamber 8. Magnet coils are arranged above and below to excite an electric field in the horizontal direction with respect to the etching wafer surface and a magnetic field in the vertical direction, and use the anions generated by irradiating the chlorine trifluoride gas introduced into the etching chamber 8 with ultraviolet rays. Then side etching occurs. [Effects] When the ramp voltage of the ultraviolet source is controlled as a function of time, the side wall of the etched trench hole has a gentle taper shape, and the side wall shape can be arbitrarily designed as a function of vertical depth. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113785190-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9088850-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012269372-A1 |
| priorityDate | 1992-03-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 22.