http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H05275395-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F4-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 |
| filingDate | 1992-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1993-10-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H05275395-A |
| titleOfInvention | Dry etching method |
| abstract | (57) [Abstract] [Purpose] In dry etching of an Al-Si-Cu alloy, it is possible to prevent the generation of a residue due to Cu. [Arrangement] A containing Al-1% Si-0.5% Cu layer 3 When the l-based multilayer film 5 is just-etched with a normal chlorine-based gas such as a Cl 2 / BCl 3 mixed gas, an Al-based wiring pattern 5a having an anisotropic shape is formed. However, at the same time, Cu and Cl * react and Cu 2 Cl 2 with a low vapor pressure Are formed, and this functions as the micro mask 7, so that a large amount of needle-like residue 5b is likely to occur. Therefore, Over-etching is performed while heating the wafer using a Cl 2 / HI mixed gas. Not only the residue 5b but also Cu contained in the micro mask 7 has a relatively high vapor pressure. 2 Removed in the form of I 2 , leaving no particle contamination. Also, residual chlorine is removed by heating the wafer, and after-corrosion resistance is improved. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-2314207-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100324606-B1 |
| priorityDate | 1992-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.