| abstract |
(57) [Summary] [Objective] The object of the present invention is to use a hydrocarbon-based gas having a larger molecular weight than methane, so that the etching rate is slow, the damage to the substrate is small, and the processed shape, especially verticality To provide an excellent method for etching a Group 6 element-containing semiconductor material. [Structure] A fine processing method of a semiconductor material according to the present invention comprises: In a method for etching a Group 6 element-containing semiconductor material using a reactive gas, a mixed gas containing ethane gas and hydrogen gas is used as the reactive gas. |