http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H05218030-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_73ebc284a55d5daf0e209d6186c9e65c |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 |
| filingDate | 1992-02-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2306fff5fb63648728946207148a761e |
| publicationDate | 1993-08-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H05218030-A |
| titleOfInvention | Method for manufacturing semiconductor device |
| abstract | (57) [Abstract] [Purpose] An interlayer insulating film of a semiconductor device having a multilayer wiring structure is planarized through an embedded conductive material formed by etching back in a through hole to improve yield and long-term reliability. A desired amount of plasma and thermal grown first and second silicon oxide films 17 and 18 is etched back on the first metal wiring 13 using organic silane, and a first coated glass 22 is spun. After coating, a desired amount is etched back, and then a third silicon oxide film 19 is laminated and then the second coated glass 2 3 is spin-coated, then a desired amount is etched back, then a fourth silicon oxide film 20 is laminated, and then a through hole is opened. After that, the second metal wiring 14 is applied. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114586175-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114586175-B |
| priorityDate | 1992-02-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.