http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H05217965-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5547f741b25666fc4ae5195cf71a979b |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 1992-01-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bec97b8b024c40f7d79b155b0fe22d26 |
| publicationDate | 1993-08-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H05217965-A |
| titleOfInvention | Method for manufacturing semiconductor device |
| abstract | (57) [Abstract] [Purpose] An insulating layer formed of an interlayer insulating film is formed on the surface of the first wiring layer exposed at the bottom of the through hole, which cannot be escaped by the conventional pretreatment method for forming the wiring layer. It is an object of the present invention to provide a pretreatment method capable of preventing the formation and effectively removing the fluorocarbon polymer formed on the surface layer of the first wiring layer in the process of forming the through hole. [Structure] First, the substrate 1 is introduced into the pretreatment chamber in the film forming apparatus, The pretreatment gas 7 mixed with CF4 and O2 is used for the treatment in the plasma generated to remove the polymer 6 formed on the first wiring layer 2 in the process of forming the through hole. Since the pretreatment gas 7 produces active species that are highly reactive with silicon and its oxide film, an insulating layer composed of the interlayer insulating film 3 is formed on the surface layer of the first wiring layer 2 exposed at the bottom of the through hole. After that, through the film forming process, the first wiring layer 2 And the second wiring layer 9 can be connected to each other without forming an insulating film therebetween. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100604756-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9653327-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012285492-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9299581-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2012154429-A2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2012154429-A3 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10510518-B2 |
| priorityDate | 1992-01-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 31.