http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H05160084-A

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
filingDate 1991-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2747f954783c72e65fd4a88c95573760
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f71cc65e68437f48693295f7ab4a4a8b
publicationDate 1993-06-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H05160084-A
titleOfInvention Method for manufacturing semiconductor device
abstract (57) [Summary] [Objective] Regarding post-treatment after contact hole formation, the purpose is to completely remove alumina deposits after contact etching and obtain good contact. [Structure] 1) An etching step of forming a contact hole in an insulating film deposited on a substrate to be processed, and then carbon tetrabromide (CBr 4 ) or boron trichloride (BCl 3 ) or carbon tetrachloride (CCl 4). 4 ) or a post-treatment step of dry-etching the substrate to be treated using plasma of a gas containing boron tribromide (BBr 3 ), 2) a gas containing the above-mentioned gas and a fluorine-based gas in the post-treatment step. 3) Using mixed gas, dry etching is performed using the above-mentioned gas in the post-treatment step, and then a fluorine-based gas is used.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H07230993-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7364956-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005026687-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100748477-B1
priorityDate 1991-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419521555
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419527288
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID14917
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559581
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID25135
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5359268
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID451818717
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419523907
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID415712843
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID25134
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID297
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559562
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID9989226
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5943
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419491804
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID11205

Total number of triples: 34.