http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H05136341-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38520f366e74704305b34fb93a81121e |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-822 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F4-00 |
| filingDate | 1992-01-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0fe93c02e7ba7daac4f63f543b5fd407 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e6afd717604d3089c464952416ecbd5f |
| publicationDate | 1993-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H05136341-A |
| titleOfInvention | Storage electrode manufacturing method |
| abstract | (57) [Summary] [Object] The present invention relates to a method for making a surface of a storage electrode of a semiconductor device having a memory capacitor portion uneven, and has a smaller number of steps and good controllability. It provides a method of preventing scum. To achieve the above object, the present invention uses polysilicon 5 or impurity-doped polysilicon as a storage electrode material, and deposits it on a semiconductor substrate, or after depositing and patterning it, mixing chlorine and oxygen. By subjecting the surface to gas plasma, the surface is made uneven. |
| priorityDate | 1991-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.