http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H05121373-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_385752f237551ca1b257f160a0f2434b |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate | 1991-10-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_edb0622da627391ae8e348694f5fea99 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_89c963c2d8de40ba4a3f4b7269c0542a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d08510a989fc54a5b1e9b70f42ba4666 |
| publicationDate | 1993-05-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H05121373-A |
| titleOfInvention | Assing method |
| abstract | (57) [Summary] [Purpose] When ashing a dry-type development resist film containing silicon, ashing is carried out with almost no progress of etching of a metal underlayer and an oxide film underlayer. Particularly, the present invention provides an ashing method which is useful for a rework step of reclaiming a base substrate due to inconvenience during a pattern forming step. [Structure] A dry development resist containing silicon is ashed by adding a fluorocarbon gas having a halogen atom or hydrogen atom other than fluorine to the oxygen gas to generate plasma. Trifluoromethane is preferable as the fluorocarbon gas. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100859650-B1 |
| priorityDate | 1991-10-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 31.