http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H05114591-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate | 1991-10-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_abb18267de8d0ec051743e91ff5649ad |
| publicationDate | 1993-05-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H05114591-A |
| titleOfInvention | Dry etching method |
| abstract | (57) [Summary] [Purpose] When etching an insulating layer on a wiring material layer, to prevent redeposition of sputtered products of the underlying layer. [Structure] The SiO 2 interlayer insulating film 2 on the Al-1% Si layer 1 is anisotropically etched to form a via hole 2a in a thickness of 90 to 95. After the formation to the depth of%, discharge is performed using S 2 Cl 2 / H 2 S mixed gas, and S (sulfur) is selectively deposited on the side wall surface of the mixed gas to form the sidewall 4. Then, the remaining portion 2b of the SiO 2 interlayer insulating film 2 is anisotropically etched. While the Al-1% Si layer 1 is exposed on the way, the sputtered product may adhere to the sidewall surface. However, the sidewall 4 causes the via hole 2a to have a pseudo-tapered cross-sectional shape. Since the ions are also incident on, the reattachment layer cannot be formed. S Alternatively, polythiazyl (SN) x or Si x N y may be deposited. |
| priorityDate | 1991-10-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 20.