http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H04330709-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_be055db3c1a09879df07379ba969e223 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-126 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0757 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-075 |
| filingDate | 1991-04-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d6e2d8307a04b5da4c8a75584228c5a4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1af7dd77e44a3851934d7250b1f76bc7 |
| publicationDate | 1992-11-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H04330709-A |
| titleOfInvention | Fine-pattern formation material and pattern formation method |
| abstract | PURPOSE: To form, with high accuracy, a pattern whose resolution is high and whose contrast is high by using a fine-pattern formation material which is composed of the following: a polysilicon resin; a substance provided with an active species generated by an electron beam; and a crosslinking agent. n CONSTITUTION: A semiconductor silicon substrate 11 is coated with a polymer organic film 12 as a lower-layer film; a baking operation is performed. The film is coated with a substance, as an upper-layer electron beam resist 13, which has dissolved the following in an ethyl cellosolve acetate solution or the like: a crosslinking agent composed of 2, 4, 6-tris[trichloromethyl]-1,3,5- triazine or the like; and poly(p-hydroxylphenylsilsesquioxane) or the like. A baking operation is performed. Then, a drawing operation is performed by using an electron beam 14 ; a developing operation is performed by using an organic alkali aqueous solution. Then, the lower-layer film 12 is etched by making use of a resist pattern 13P as a mask. Thereby, a fine resist pattern can be formed with high accuracy. n COPYRIGHT: (C)1992,JPO&Japio |
| priorityDate | 1991-04-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.