http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H04279029-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5547f741b25666fc4ae5195cf71a979b |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 |
| filingDate | 1991-01-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4e7cce40b3412c62aa5e777ac94d5645 |
| publicationDate | 1992-10-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H04279029-A |
| titleOfInvention | Plasma etching method of iii-v compound semiconductor |
| abstract | PURPOSE: To enable surface damage in the case of the plasma etching method of III-V compound semiconductor to be suppressed. n CONSTITUTION: When performing plasma etching of III-V compound semiconductor, a mixed gas including a methyl compound of V element constituting a semiconductor and hydrogen is used as an etching gas. Since a V element can be supplied to a surface of the semiconductor at the time of etching, a slip-out of the V element can be suppressed. Also, since the methyl compound of V element has a low connection energy, a power density of plasma can be reduced. Also, when performing plasma etching of a III-V compound semiconductor including phosphor, use of a mixed gas including arsenic methyl compound and hydrogen or arsenic methyl compound, phosphor methyl compound, and hydrogen further enables slip-out of V element to be suppressed. n COPYRIGHT: (C)1992,JPO&Japio |
| priorityDate | 1991-01-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 15.