http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H04278587-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0a6a69da5879eb83f56f6876dba3e3cf |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-792 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-788 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 |
| filingDate | 1991-03-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c5c27be02d1133fdded0001692c8e504 |
| publicationDate | 1992-10-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H04278587-A |
| titleOfInvention | Manufacture of semiconductor memory |
| abstract | PURPOSE: To provide a manufacturing method for a floating gate type semiconductor memory in which a program voltage can be lowered without deteriorating memory characteristic and deterioration upon rewriting can be reduced. n CONSTITUTION: A step of forming an insulating film 10 containing at least a silicon nitride film on one conductivity type semiconductor substrate 1, a step of hydrogen plasma processing, a step of forming a floating gate electrode 11 on the film 10, and a step of forming a control gate electrode 13 on the film 11 through an insulating film 12, are provided. Since hydrogen content of the nitride film for constituting the film 10 is increased by the hydrogen plasma processing, electric conductivity is reduced, and even if the silicon nitride film is used as a tunneling insulating film, memory characteristic is not deteriorated. n COPYRIGHT: (C)1992,JPO&Japio |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6335549-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6483133-B2 |
| priorityDate | 1991-03-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 21.