| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c62268de3e92657ca5b9adcac4778225 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F4-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-583
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05H1-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-58
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B41-87
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate |
1991-01-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_deba6f71f1769c9b3cbddbd1e2109c61
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_71fe0abddd9e2e7a29c6ddf906faa6e6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e9fe6663109d1c2eb801da0fe2c2a6ac |
| publicationDate |
1992-08-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-H04238882-A |
| titleOfInvention |
High-temperature insulated article |
| abstract |
PURPOSE: To increase the etching rate by applying a substance having plasma resistance onto a hexagonal BN compact. n CONSTITUTION: One surface of a hexagonal BN sintered compact disk having 0.01-10 mm thickness is coated with a plasma-resistant substance such as SiC to 0.001-1mm thickness according to a chemical vapor deposition method to form a high-temperature insulated article. On the other hand, the other surface is subjected to electroless Ni plating to form an electrode. Thereby, an electrostatic chuck is obtained. A wafer 5 is then fixed on a lower electrode 3 of a pair of the electrodes installed in a vacuum vessel 1 of a plasma etching apparatus with the resultant electrostatic chuck 4. The interior of the vacuum vessel 1 is subsequently evacuated with a vacuum pump 9 and an etching gas such as tetrachloromethane is then fed from a gas blowoff hole 6. A high-frequency electric power is subsequently applied across the upper electrode 2 and the lower electrode 3 to generate a plasma. The surface temperature of a heater 10 and the wafer 5 is then heated to 100-1000°C to perform etching for a prescribed time. Thereby, high-speed etching is carried out. n COPYRIGHT: (C)1992,JPO&Japio |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9883549-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-0248421-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10257887-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7589950-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7697260-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9275887-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100945315-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6490146-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6538872-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009179507-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-100386467-C
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8877002-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7907384-B2 |
| priorityDate |
1991-01-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |