http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H04184917-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_385752f237551ca1b257f160a0f2434b |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-30 |
| filingDate | 1990-11-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c7ef17bfb96d8609575fc61c35baf88d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7b1edd5f2a02e477874622b6ad506de8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fab4cf1def9c3bd50766eb2f28dc0b06 |
| publicationDate | 1992-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H04184917-A |
| titleOfInvention | Ashing method and equipment |
| abstract | PURPOSE: To completely ash silylated resist without damaging a substratum Si wafer, by performing two-stage ashing in which plasma of mixed gas of hydrogen and fluorocarbon and plasma of gas containing oxygen are used. n CONSTITUTION: The inside of a process chamber 1 is kept at a specified pressure; gas for generating plasma is made to flow at a specified rate; discharge is generated by applying microwave power; thus plasma is generated. Resist which is spread on a wafer 2A retained on a retaining stand 2 by ions in the plasma, and developed is subjected to ashing. In this case, a first stage ashing is performed by using plasma of mixed gas of CF 4 gas and H 2 gas, and a second stage ashing is performed by using plasma of O 2 gas. n COPYRIGHT: (C)1992,JPO&Japio |
| priorityDate | 1990-11-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 21.