http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H04127429-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 |
| filingDate | 1990-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_75d8e710ebe07e77d50b5d03e46983ee |
| publicationDate | 1992-04-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H04127429-A |
| titleOfInvention | Manufacture of semiconductor device |
| abstract | PURPOSE: To obtain the manufacturing method, for a semiconductor device, by which a stable etching operation is executed so as not to produce the undercut of an etching pattern by a method wherein a photoresist film with which at least one part is covered is formed on the dicing line of a semiconductor substrate and the film area of the photoresist film used as the mask of a material to be etched on the semiconductor substrate is increased. n CONSTITUTION: A substrate 1 is covered with a poly-Si film; an anisotropic etching operation by an RIE method is executed. A positive-type photoresist film 3 is used as the mask of a material 2 to be etched. The chip area inside a wafer is set at 5 mm square; the width of a dicing line is set at 160μm; the width of a resist on the dicing line is set at 100μm; a photoresist film 7 is used as a dummy pattern. The RIE method is executed in the following manner: a parallel-plate type plasma etcher is used at a frequency of 13.56MHz and at a power of 300W; and CCl 4 at 300sccm and an oxygen O 2 at 10sccm which are used as gases are introduced into the chamber. As a result, it is possible to reduce an undercut to 0.1μm or lower, and an etching pattern which does not produce the undercut at a chip 8 as a whole can be obtained in a state that the cross section of a sidewall is nearly vertical and sharp. n COPYRIGHT: (C)1992,JPO&Japio |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006049425-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013201168-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104347371-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4572096-B2 |
| priorityDate | 1990-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 19.