| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-051
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-963 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0209
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02046
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67028 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F4-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate |
1990-08-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ee5ab812b014d90c6be35b931614831a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8a6667537f9299b740244e3af2dd0a3c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d624e2e497e387b78e3c62b5dd0db337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_904785e3aa97a7d10f1897bda62569b8 |
| publicationDate |
1991-04-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-H0397869-A |
| titleOfInvention |
Method for removing deposit from rear surface and end edge of semiconductor wafer and device therefor |
| abstract |
PURPOSE: To remove deposits from the rear surface and end edges of a semiconductor wafer by pressing the front side of the wafer to a face plate in a vacuum chamber, admitting gases into the vacuum chamber via a spacing held between both and generating plasma. n CONSTITUTION: Removal pins 70 are risen by a lifting means 80 to press the front surface 54 of the semiconductor wafer 50 to the face plate 30 in the vacuum chamber 4. A central part 32 recessed to a circular shape having projecting segments 36 is formed on the base of the face plate 30. The wafer 50 forms the space communicating with the vacuum chamber 4 via the segments 36. Treating gases contg. process gases to generate fluorine groups are supplied via a conduit 42, plenum 40 and openings 34 into the space and are admitted into the vacuum chamber 4. The plasma is generated between the rear surface 52 of the wafer 50 and a susceptor 20 by an RR electric power source 90. As a result, the deposits on the rear surface 52 and end edges 56 of the wafer 50 are removed without removing the material adhered on the front surface 54 of the wafer 50. n COPYRIGHT: (C)1991,JPO |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8888950-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101362815-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012256895-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008108812-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006319043-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002289576-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101357699-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7767054-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0576041-U |
| priorityDate |
1989-08-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |