| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b0120933550ea729b9f3186c3772531b |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B32B15-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K3-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K3-38 |
| filingDate |
1990-03-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4678f9d89221e2cce3a94733b3cb00db
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_22a6dfec0048bcf2be406dd140d6efac
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_295499faa9522edd863e723dca191d17
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9c7be1ca403d8438d8e98ad79e86129d |
| publicationDate |
1991-11-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-H03259594-A |
| titleOfInvention |
Blank board for circuit board use |
| abstract |
PURPOSE: To prevent a high-polymer material layer from being exfoliated from a copper layer by a method wherein the copper layer is formed on the surface of the high-polymer material layer and a coppoer nitride layer is formed be tween the high-polymer material layer and the copper layer. n CONSTITUTION: A polyimide film 1 of 50μm thick is used as a high-polymer material layer; the surface of the polyimide film 1 is treated with an argon plasma; after that, a copper nitride layer 2 in 200Å is formed by a reactive sputtering method while copper is used as a target and nitrogen is used as a carrier gas. After that, a copper layer 3 in 1μm is formed on the copper nitride layer 2 by a sputtering method using argon as a carrier gas. In adition, an electrolytic plating operation is executed onto it; the total thickness of the copper layer 3 by the sputtering method and a copper layer 4 by the electrolytic plating operation is set to 35μm; a blank board for circuit board use is manufac tured. n COPYRIGHT: (C)1991,JPO&Japio |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I486108-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0989914-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102007021896-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2000165002-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8981234-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007036571-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2010010753-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6710260-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102090158-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-5487473-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0989914-A4 |
| priorityDate |
1990-03-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |