http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H03214729-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_be055db3c1a09879df07379ba969e223 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-13091 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-015 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-291 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-321 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5329 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76886 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-321 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-29 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532 |
| filingDate | 1990-01-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_34fd87b2b2796f9c2c5f8d02def61250 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_868774415f4eda881b606309f09fe4f3 |
| publicationDate | 1991-09-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H03214729-A |
| titleOfInvention | Manufacture of semiconductor device |
| abstract | PURPOSE:To suppress generation of corrosion due to washing of an alumina alloy film by performing surface treatment with plasma of oxygen gas before washing after forming an alumina alloy wiring film including different kinds of metals. CONSTITUTION:After forming a desired semiconductor device within a si;icon substrate 1, a silicon oxide film 2 is formed and an alumina alloy film 3 including several 1% silicon and copper is deposited on it, thus enabling a thin and non-uniform oxide film (passivation layer) 4 to be formed on the surface. Then, when plasma treatment, using oxygen gas is performed for replacing the non- uniform passivation layer 4 by a uniform passive state layer 5, the uniform passive stage layer 5 is strong against corrosion on washing. After that, this film is dipped into a solution of fuming nitric acid for eliminating an organic matter and then it is washed and dried. After that, a wiring pattern 6 is formed on the alumina alloy film 3 using photolithography, the alloy film 3 is dry-etched for forming an alumina wiring 3a, using the remained resist 6, and then forming a uniform passivation film 7, thus eliminating corrosion of an alumina alloy film including a foreign type metal and enabling a stable wiring to be formed. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105489670-A |
| priorityDate | 1990-01-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 38.