http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H03204928-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_be055db3c1a09879df07379ba969e223 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-963 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02063 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
| filingDate | 1990-10-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9f1063b314da624b6a818793ab834870 |
| publicationDate | 1991-09-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H03204928-A |
| titleOfInvention | Formation of contact hole |
| abstract | PURPOSE: To enable the deposit formed during the etching process for making a contact hole to be easily removed by a method wherein a specific part of an insulating layer is etched away using an etching gas whereto a gas containing nitrogen atoms is added. n CONSTITUTION: An N 2 added etching gas of a mixed gas containing CHF 3 , O 2 and He is used for the title formation. The etching gas in plasma state is brought into contact with a wafer led-in an RIE device so as to etch away the part not covered with a photoresist 7 in the second insulating layer 4 on the wafer in high anisotropy. The wafer is kept in contact with the etching gas in plasma state for a little while even after the surface of a metal layer 3 is exposed to the bottom part of a contact hole so as to nitrify the surface 3a of the metal layer 3. Accordingly, since the metal layer 3 is hardly sputtered, the implantation of the metal of the metal layer 3 or the compound of the metal into the deposit 8 on the sidewall part of the contact hole can be restrained. In such a constitution, the deposit 8 is hardly set to be easily removed by the cleaning process, etc., after the etching process. n COPYRIGHT: (C)1991,JPO&Japio |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0596593-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6531067-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5284549-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5254213-A |
| priorityDate | 1989-10-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.