http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H03155622-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_12d24c0a12c3ecdb6d9a47d623d96e76 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 |
| filingDate | 1990-03-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cbbde47885c137e8f3fa4e699563ec79 |
| publicationDate | 1991-07-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H03155622-A |
| titleOfInvention | Dry etching method |
| abstract | PURPOSE: To form a surface to be etched into a mirror surface state without emulsification by selectively etching a silicon substrate in an anode coupling type dry etching apparatus using mixture gas of SF 6 gas and O 2 gas of a range having specific mixture ratio of O 2 gas. n CONSTITUTION: Gas of mixture of sulfur hexafluoride as reaction gas with oxygen gas in a range of 6 to 15vol.% to the entire reaction gas is used. In a reaction tank 1, a lower electrode 2 as a stage and an upper electrode 3 are opposed. A discharge tube 4 provided dispersively at the peripheral edge of the bottom plate 11 of the tank 1 is provided toward the center of the electrode 2 parallel to its bottom plate. A silicon substrate 20 to be processed, formed with a mask pattern is mounted on the stage 2 of a dry etching apparatus, SF 6 gas and O 2 gas are fed from an inlet 7 as mixed reaction gas 8 while regulating its flow rate. A high frequency power is applied to the electrode 3 to generate a plasma 9 between the electrodes 2 and 3. n COPYRIGHT: (C)1991,JPO&Japio |
| priorityDate | 1989-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 16.