http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H03104181-A
Outgoing Links
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|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0282 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0203 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3081 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3086 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0035 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-028 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-02 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-028 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S3-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-308 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 |
| filingDate | 1989-08-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7f24d8e7f669bb5eef6c6a429636a607 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8f73d41e3ae81153aa80956679d46d1f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e19fc72a34b0e6e31230af3682b949d7 |
| publicationDate | 1991-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H03104181-A |
| titleOfInvention | Etching method for mirror facet for iii and iv compound semiconductor structure and forming method for etching mask |
| abstract | PURPOSE: To provide a high-quality mask for an IBE treatment by using a master sandwiching an etching dielectric material layer between resist layers, removing the intermediate layer before etching, and making the lower resist of high etching resistance into only one mask. n CONSTITUTION: A multilayer GaAs/AlGaAs layer body structure 11 completing mirror facet etching preparation is covered with the mask of three layers of hard bake resist/amorphous SiO 2 /prebaked resist and patterned on upper resist PRtop and a mirror groove is formed. Next, RIE is performed in the exposed part of an SiO 2 layer in CF 4 plasma, the exposed part of a lower resist layer PRbot is etched by switching into O 2 , and at the same time, the PRtop is removed as well. By switching it to CF again, the remaining part of the SiO layer is removed. Next, etching is performed by a high vacuum CAIBE device, and an etching groove 19 is provided in the deep part of a lower clad layer in laser structure. Finally, the remaining PRbot is removed and washed in O 2 plasma, and etching of a mirror facet 20 in III and V compound semiconductor structure is completed. n COPYRIGHT: (C)1991,JPO |
| priorityDate | 1988-09-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID24261 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID457707758 |
Total number of triples: 29.