http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0282577-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_73ebc284a55d5daf0e209d6186c9e65c |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 1988-09-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7b33b78dc568f054092588db94cb1859 |
| publicationDate | 1990-03-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H0282577-A |
| titleOfInvention | Manufacture of thin film transistor |
| abstract | PURPOSE: To obtain a highly reliable thin film transistor having a large area and very few defects by forming a gate insulating film by an ECR plasma CVD method. n CONSTITUTION: A source electrode 102 and a drain electrode 103 composed of thin films of silicon such as polycrystalline silicon or amorphous silicon doped with impurity which is to be donor or acceptor are formed on an insulating substrate 101 by a CVD method such as a low pressure CVD method or a plasma CVD method. Then a semiconductor layer 104 composed of a thin film of silicon such as polycrystalline silicon or amorphous silicon is formed by a CVD method such as a low pressure CVD method or a plasma CVD method. Then a source wiring 105 and a drain wiring 106 composed of metal films or transparent conductive films are formed by a sputtering method or an evaporation method. Further, a gate insulating film 107 made of SiO 2 , SiN x or the like is formed by an ECR plasma CVD method. Then a gate electrode 110 composed of a metal film or a transparent conductive film is formed by a sputtering method or an evaporation method. n COPYRIGHT: (C)1990,JPO&Japio |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5504019-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0486047-A3 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0486047-A2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5637512-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5811323-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5372958-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5591989-A |
| priorityDate | 1988-09-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.