| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_385752f237551ca1b257f160a0f2434b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3c82fea9cd3dc48540ebd26d3b952479 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08F8-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08F8-30 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08L101-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08K5-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08K5-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08F8-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08F8-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-023
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-022 |
| filingDate |
1988-08-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3417daba86cf78589360667143df2d0c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2335d32228b7bcfed63ed5ff14fb78a5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c0ba2a96691bbe182a3bbb106f6a53ee
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cf11fe08509a5f370c3244b83a85bfbb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b5748735a0874a5e21ae6f4603704b6c |
| publicationDate |
1990-01-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-H025060-A |
| titleOfInvention |
Resist pattern forming method |
| abstract |
PURPOSE: To ensure high resolution and high selectivity ratio only by etching with oxygen plasma by incorporating a radiation sensitive resin and an acid generating material. n CONSTITUTION: A quinonediazido radiation sensitive resin such as a condensation product of a quinonediazido compd. and an alkali-soluble resin or a mixture of a quinonediazido compd. with an alkali-soluble resin and a material (acid generating material) which generates an acid when irradiated are incorporated. The acid generating material generates an org. acid such as sulfonic acid, phosphoric acid or iodic acid when irradiated with UV, far UV, X-rays or other radiation. The absorption reaction of a silicon compd. in the irradiated part of the resultant compsn. is selectively accelerated and a high precision image can be formed by etching with high resolution, high selectivity ratio and satisfactory reproducibility. n COPYRIGHT: (C)1990,JPO |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0442231-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H08190204-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2001174983-A |
| priorityDate |
1988-02-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |