http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0236528-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 |
filingDate | 1988-07-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eb6d307b15518ca3f4163bb0f551d17f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e790dc4f206a986be36767f702009010 |
publicationDate | 1990-02-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-H0236528-A |
titleOfInvention | Removal of resist from semiconductor substrate |
abstract | PURPOSE: To prevent a metal from permeating into an oxide film and a substrate by a method wherein semiconductor substrates coated with a resist are placed in a plasma producing atmosphere into which is fed oxygen gas to which at least one out of chlorine gas and chlorine based gas is added. n CONSTITUTION: Silicon substrate 1 coated with resist after the surface oxidation are erected on a base 8 arranged in a quartz chamber 6 of an ashing device 5 while the chamber 6 being pressure-reduced by a vacuum pump P is filled with at least oxygen gas and carbon tetrachloride gas. Furthermore, electrodes 10, 10' on both sides of the chamber 6 are impressed with high-frequency to turn the inside of the chamber 6 into plasmic state. In such an ashing device 5, the carbon tetrachloride gas produces a radial O* and a radical Cl* then the radical O* reacts to the resist to etch away the resist while the radical Cl* reacts to a metal contained in the resist on the substrate 1 becoming a chloride 4 to be discharged by sublimation and evaporation. n COPYRIGHT: (C)1990,JPO&Japio |
priorityDate | 1988-07-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.